447 TB/cm² zero-retention energy - fluorographene-based atomic-scale memory

This proposes a non-volatile memory structure that implements atomic-scale bit storage using the covalent bond directionality of a single fluorographene layer.

This structure targets an extremely high storage density of 447 TB/cm², using the atomic arrangement itself as the information storage medium.

The key finding is that the C–F bond inversion barrier was calculated to be 4.6–4.8 eV.

Thanks to this energy barrier, spontaneous bit loss is effectively eliminated, showing the potential for memory operation with near-zero retention energy.